Show simple item record

dc.contributor.authorIlhan, Mustafa
dc.contributor.authorKoc, Mumin Mehmet
dc.contributor.authorCoskun, Burhan
dc.contributor.authorErkovan, Mustafa
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2021-03-15T13:06:10Z
dc.date.available2021-03-15T13:06:10Z
dc.date.issued2021
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttps://doi.org/10.1007/s10854-020-05000-3
dc.identifier.urihttps://hdl.handle.net/20.500.12879/106
dc.descriptionKOC, Mumin Mehmet/0000-0003-4500-0373en_US
dc.descriptionWOS:000604333400040en_US
dc.description.abstractAl/n-Si/Ti1-xO2CdxO/Al photodiodes were produced using sol-gel and spin coating methods where CdO dopant was applied on different concentrations (x = 0.0; x = 0.01; x = 0.05; x = 0.10). Cd dopant effect upon structural, optical, photodiode and electrical properties was assessed. Scanning electron microscope and energy-dispersive spectra were used in the structural investigation. Optic properties were assessed using UV-Vis spectroscopy and bandgap energies of the photodiodes were calculated which were found to be between 3.25 and 3.36 eV. Increased bandgap energy was observed with increased CdO doping rate. Photodiode properties were assessed under varying daylight illuminations. Barrier height, ideality factor, dark current, linear dynamic rate, photosensitivity, photoresponsivity of the photodiodes were calculated. Electrical properties of the Al/n-Si/Ti1-xO2CdxO/Al photodiodes were calculated where conductance-voltage and capacitance-voltage plots were obtained. Corrective conductance-voltage and corrective capacitance-voltage graphs confirm that the electrical properties of the photodiodes depend on AC signal frequency. Frequency-dependent electrical characteristics were attributed to the density of interface states which were found to be between 10(11) and 10(12). Decreased density of interface state was found for increased AC signal frequency.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword Available]en_US
dc.titleCd dopant effect on structural and optoelectronic properties of TiO2 solar detectorsen_US
dc.typearticleen_US
dc.contributor.departmentBeykoz Üniversitesi Muhendislik ve Mimarlik Fakultesien_US
dc.contributor.institutionauthorErkovan, Mustafa
dc.identifier.doi10.1007/s10854-020-05000-3
dc.identifier.volume32en_US
dc.identifier.issue2en_US
dc.identifier.startpage2346en_US
dc.identifier.endpage2365en_US
dc.relation.journalJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record