Browsing by Author "Coskun, Burhan"

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Cd Dopant Effect on Structural and Optoelectronic Properties of TiO2 Solar Detectors
(Springer, 2021) Ilhan, Mustafa; Koc, Mumin Mehmet; Coskun, Burhan; Erkovan, Mustafa; Yakuphanoglu, Fahrettin
Al/n-Si/Ti1-xO2CdxO/Al photodiodes were produced using sol-gel and spin coating methods where CdO dopant was applied on different concentrations (x = 0.0; x = 0.01; x = 0.05; x = 0.10). Cd dopant effect upon structural, optical, photodiode and electrical properties was assessed. Scanning electron microscope and energy-dispersive spectra were used in the structural investigation. Optic properties were assessed using UV-Vis spectroscopy and bandgap energies of the photodiodes were calculated which were found to be between 3.25 and 3.36 eV. Increased bandgap energy was observed with increased CdO doping rate. Photodiode properties were assessed under varying daylight illuminations. Barrier height, ideality factor, dark current, linear dynamic rate, photosensitivity, photoresponsivity of the photodiodes were calculated. Electrical properties of the Al/n-Si/Ti1-xO2CdxO/Al photodiodes were calculated where conductance-voltage and capacitance-voltage plots were obtained. Corrective conductance-voltage and corrective capacitance-voltage graphs confirm that the electrical properties of the photodiodes depend on AC signal frequency. Frequency-dependent electrical characteristics were attributed to the density of interface states which were found to be between 10(11) and 10(12). Decreased density of interface state was found for increased AC signal frequency.
Optoelectronic Investigation of Cu2FeSnS4 Quaternary Functional Photodiodes with IR Detection Capabilities
(Elsevier, 2021) Koc, Mumin Mehmet; Dere, Aysegul; Ozdere, Alper; Al-Sehemi, Abdullah G.; Coskun, Burhan; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin
Cu2FeSnS4 semiconductor used in the preparation of quaternary photodiodes was synthesized using hydrothermal synthesis. The nanoparticles were then spin coated on a silicon substrate. Nanoparticles were characterized using SEM and EDX where nanoparticles in granular form were seen. Optoelectronic properties were assessed using UV spectra throughout which bandgap energies were calculated. The band gap energy of Cu2FeSnS4 semiconductor was found as 1.22 eV. I - V and I - t characteristics illustrate that Al/p-Si/Cu2FeSnS4/Al heterojunction photodiodes were responsive to daylight and infrared light. Ideality factor, barrier height, saturation current, and photoresponse values were calculated using I - V and I - t data. The ideality factors were calculated as 5.14 and 5.61 for daylight and infrared light (IR) illuminations, respectively. Electrical properties of diodes were checked using C - V and G - V analysis. It was seen that the electrical properties of photodiodes strongly depend on AC signal frequency. Our assessment revealed that frequency related electrical behavior is originated from interface states. (C) 2021 Elsevier B.V. All rights reserved.